Download or read book Point Defect Incorporation During Diamond Chemical Vapor Deposition written by and published by . This book was released on 1999 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation of vacancies, H atoms, and sp2 bond defects into single-crystal homoepitaxial (100)(2x1)- and(111)-oriented CVD diamond was simulated by atomic-scale kinetic Monte Carlo. Simulations were performed for substrate temperatures from 600 C to 1200 C with 0.4% CH4 in the feed gas, and for 0.4% to 7% CH4 feeds with a substrate temperature of 800 C. The concentrations of incorporated H atoms increase with increasing substrate temperature and feed gas composition, and sp2 bond trapping increases with increasing feed gas composition. Vacancy concentrations are low under all conditions. The ratio of growth rate to H atom concentration is highest around 800-900 C, and the growth rate to sp2 ratio is maximum around 1% CH4, suggesting that these conditions are ideal for economical diamond growth under the simulated conditions.