Download or read book Interaction of VUV-FEL Radiation with B4C and SiC at 32nm Wavelength written by R. London and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: The output fluence and pulse duration of XFELs such as LCLS and TESLA will pose significant challenges to the optical components which may be damaged by the XFEL beam [1]. It is expected that low-atomic-number materials such as SiC, B{sub 4}C, and diamond exhibit weak absorption and therefore are damaged least. It has been suggested that the fundamental damage mechanism that determines the fluence damage threshold for single-shot exposures is thermal melting of the materials [2]. For multiple-shot exposures, the damage threshold is potentially lower than the melt threshold due to fatigue effects associated with mechanical stresses during to thermal cycling [3].