Download or read book Simulation Study of Device Characteristics and Short Channel Effects of Nanoscale Germanium Channel Double-gate MOSFETs written by Divya Gangadharan and published by . This book was released on 2008 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the endeavor to increase integrated circuit chip densities and improve performance, MOSFET dimensions have been rapidly decreasing over the past four decades. In the next decade, gate (channel) lengths will be scaled to 10 nm and possibly lower. A shorter channel enables faster switching, however new effects come into play at these nanoscale dimensions that are detrimental to transistor performance. These effects called Short Channel Effects (SCEs) are important criteria when designing a device for operation at the nanoscale regime. Device design can involve changing the device structure as well as the material parameters of the device. Using a Double-Gate structure for MOSFETs can be very effective in controlling short channel effects since the double gate structure offers superior gate control of the channel. Germanium is a very attractive channel material for MOSFETs since it can offer higher transconductance due to its superior electron and hole mobilities. In this simulation study, the potentials and limitations of using a Germanium channel Double-Gate MOSFET at nanoscale dimensions is investigated.