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Language: en
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Pages: 203
Type: BOOK - Published: 2013-10-19 - Publisher: Springer Science & Business Media
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several g
Language: en
Pages: 159
Pages: 159
Type: BOOK - Published: 2009 - Publisher: Stanford University
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovativ
Language: en
Pages: 320
Pages: 320
Type: BOOK - Published: 2011 - Publisher:
Since metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for integrated circuits in 1961, complementary MOS technology has becom
Language: en
Pages: 160
Pages: 160
Type: BOOK - Published: 2011-10 - Publisher: LAP Lambert Academic Publishing
This work presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance an
Language: en
Pages: 340
Pages: 340
Type: BOOK - Published: 2024-05-29 - Publisher: John Wiley & Sons
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advan