After many decades, the scaling of silicon dioxide based field-effect transistors has reached insurmountable physical limits due unintentional high gate leakage

In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies

Design considerations for low-power operations and robustness with respect to variations typically impose contradictory requirements. Low-power design technique

This book evaluates the influence of process variations (e.g. work-function fluctuations) and radiation-induced soft errors in a set of logic cells using FinFET

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the