As data processing and storage needs continue to grow at a rapid pace, the development of innovative memory technologies is crucial. The discovery of ferroelect

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and i

Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (Hf

In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope