The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and i

Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent inno