The tri-gate FET has been hailed as the biggest breakthrough in transistor technology in the last 20 years. The increase in device performance (faster switching

The limited benefits of strain engineering in extremely scaled silicon devices and a lack of demonstrated gain in performance at the product level in nanowires,

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advan

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron e