Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the sp

III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic appl

Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as

All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging applicat