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Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy
Language: en
Pages: 288

Growth and Evaluation of GaN on Si(111) Substrates Using Electron Cyclotron Resonance Plasma-assisted Molecular Beam Epitaxy

Authors: Akira Ohtani
Categories: Cyclotron resonance
Type: BOOK - Published: 1999 - Publisher:

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Growth and Characterization of GaN Nanorods Grown on Si(111) Substrate by Plasma-assisted Molecular Beam Epitaxy
Language: en
Pages: 169

Growth and Characterization of GaN Nanorods Grown on Si(111) Substrate by Plasma-assisted Molecular Beam Epitaxy

Authors:
Categories:
Type: BOOK - Published: 2004 - Publisher:

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Dissertation Abstracts International
Language: en
Pages: 708

Dissertation Abstracts International

Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 1999 - Publisher:

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Molecular Beam Epitaxial Growth of Gan on Si(111) Substrate
Language: en
Pages:

Molecular Beam Epitaxial Growth of Gan on Si(111) Substrate

Authors: Zhongjie Xu
Categories:
Type: BOOK - Published: 2017-01-26 - Publisher:

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Growth and Doping of Al(x)Ga(1-x) Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy
Language: en
Pages: 92

Growth and Doping of Al(x)Ga(1-x) Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

Authors:
Categories:
Type: BOOK - Published: 1992 - Publisher:

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Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional n